| 摘要 |
A CMOS image sensor and a method for manufacturing the same are provided to reduce the loss of the light by totally reflecting the light inputted to a microlens to a photodiode by using a void. A plurality of photodiodes(210) are formed on a semiconductor substrate(200). An interlayer insulation layer(220) is formed in the front side of the semiconductor substrate. A color filter layer is formed on the interlayer insulation layer. A microlens is formed on the color filter layer. A void(225) is formed inside the interlayer insulating layer. The void is prepared to induce the total reflection of the light.
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