| 摘要 |
<p>A semiconductor device is provided to improve the image quality of a display device while reducing an off-current and increasing an on-current and the mobility of electric filed. A gate electrode(51) has an inside region and an end part, and a gate insulation layer(52b) is formed on the gate electrode. A semiconductor film(58) overlaps with the inside region and does not overlap with the end part. The semiconductor film is formed on a gate insulating layer, and the film is formed in order to cover the side of the semiconductor film. A source interconnection is formed on the film, and a drain interconnection is formed on the film. The side is opposite to one of the source interconnection and the drain interconnection.</p> |
