| 摘要 |
<p>A method for manufacturing a high voltage device is provided to reduce the length of a drift region and a channel region by forming the drift region with a vertical structure symmetrically. A pair of drift regions(21) are formed in a semiconductor substrate in a vertical direction. An oxide film(22) partially overlapped with the pair of the drift regions is formed in a surface of the semiconductor substrate. The trench region is formed on the semiconductor substrate between the pair of drift regions. An oxide film spacer(24) is formed in both sidewalls of the trench region. The gate is formed in an inner side of the trench region and the upper part of the oxide film. The surface of the gate is planarized by etching. The source and drain are formed in the pair of drift regions.</p> |
