| 摘要 |
<p>A method for manufacturing a hard mask of a semiconductor device is provided to reduce a process stage by forming a capping layer and an anti-reflection layer made of the same material. A semiconductor substrate with a layer(104) to be etched is provided. A first hard mask(106) is formed on the layer to be etched layer as a capping layer. A second hard mask(108) is formed on the first hard mask by using the amorphous carbon. A third hard mask(110) is formed on the second hard mask as an anti-reflection layer. The third hard mask and the first hard mask are made of the same material.</p> |
