METHOD FOR DEPOSITING THIN FILM CONTAINING METAL

摘要

A method for forming a thin film with metal is provided to suppress the lowering of the property of the thin film due to a particle by performing a plasma process after purging a deposition particle. The source gas and the reaction gas are supplied to the inside of a reactor and a thin film is deposited on a substrate(S310). The source gas includes a halogen compound containing a metal atom. The inert gas is supplied to the reactor and the inside of the reactor is purged(S330). The plasma process is performed in the thin film with in-situ by using the plasma(S340). The source gas and the reactive gas are supplied at the same time or alternatively.