| 摘要 |
A manufacturing method of a semiconductor device is provided to prevent misalignment between a tungsten contact and a copper interconnection by forming a copper metal interconnection and a tungsten contact by a dual damascene process. An insulation film is formed on a whole surface of a semiconductor substrate including a top surface of a transistor. A trench and a contact hole are formed by etching the insulation film. A contact(50B) is formed by filling a first conductive layer in the contact hole. An etching stop layer(52) is selectively formed on a top part of the contact. The first conductive layer is etched in the trench. A metal interconnection is formed by filling a second conductive layer in the trench.
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