CHEMICAL TREATMENT TO REDUCE MACHINING-INDUCED SUB-SURFACE DAMAGE IN SEMICONDUCTOR PROCESSING COMPONENTS COMPRISION SILICON CARBIDE

摘要

A chemical treatment method is provided to remove a crystal structure damaged from a surface of a silicon carbide element used as a semiconductor processing device. A silicon carbide is converted into a silicon oxide by treating a silicon carbide surface of a silicon carbide element by a liquid oxidizer. The silicon oxide is removed by using the liquid. A process for treating the surface of the silicon carbide and a process for removing the silicon oxide are consecutively repeated. An opening of the surface is performed by one among a liquid etchant or a plasma etching. A process for treating the surface of the silicon carbide is performed by the liquid oxidizer in an ultrasonic bath at temperature of 20~200°C for 1~100 hour.