| 摘要 |
<p>A semiconductor device and a manufacturing method thereof are provided to prevent thinning of an anti-reflection layer by forming a dummy pattern or extending a floating gate of the lower part up to an interface area. A floating gate pattern(110) is formed in a cell area of a semiconductor substrate. A dummy floating gate pattern(110a) is formed in an interface area around the cell area. The dummy floating gate pattern is extended in the floating gate pattern. A control gate pattern crosses the floating gate pattern in the cell area of the semiconductor substrate. The dummy floating gate pattern is extended from the cell area with 0.13 to 1.56 um.</p> |
