| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to prevent a pinning phenomenon due to Hf in an interface of the silicon substrate and the metal gate oxide and the interface of a gate electrode and the metal gate oxide. A semiconductor device includes a gate structure(360), a spacer, a source region, and a drain region. The gate structure is formed on a semiconductor substrate. In the gate structure, a SiON film(310), a first HfSiON film(320), a second HfSiON film(330), a polysilicon layer(340) and a gate electrode(350) are successively laminated on the semiconductor substrate. The gate electrode is silicified.
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