| 摘要 |
The semiconductor device including current relief section and manufacturing method thereof are provided to reduce the damage caused by electromigration by forming the current relief section on the relocation conductive layer. The first insulation layer(220) is formed on the semiconductor substrate(200). The electrode pad is exposed after forming the first insulation layer. And the indentation for the current relief section of the well shape is simultaneously formed. The rearrangement conductive layer(230) is partly formed in order to be electrically connected with the electrode pad on the first insulation layer. The current relax well(420) is formed in the indentation. The second insulation layer(240) is formed on the first insulation layer and rearrangement conductive layer. The under bump metal(250) is formed on the exposed site of the second insulation layer. The solder bump(260) is formed on the lower metal layer and the reflow process is performed. |
