| 摘要 |
<p>A semiconductor device and a manufacturing method thereof are provided to minimize a stress due to degassing of a fluorine gas by forming a via slit between adjacent via holes. An interlayer insulation film is formed on a semiconductor substrate. A plurality of via holes(200) is formed by penetrating the interlayer insulation film. The via holes are separated by at least one via slit. A via pattern has at least one via slit. A tungsten plug is formed inside the via hole. A bottom metal wiring is formed on a top part of an insulation film of the semiconductor substrate. A top metal wiring is formed on a top part of the tungsten plug.</p> |
