| 摘要 |
An on resistance test method for a back-side-drain wafer is provided to measure on-resistance accurately without contacting a metal chuck with a drain by forming a current path passing a common drain. A drain(6) is prepared at the rear side of a wafer, and a first MOS transistor(Die1) and a second MOS transistor(Die2) commonly use a drain. A current path passing the first MOS transistor and the current path is formed, and the resistance between the first MOS transistor and a second MOS transistor is measured. A voltage is applied to gates(4,4') of the first MOS transistor and the second MOS transistor which are adjacent to teach other.
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