THIN FILM TRANSISTOR AND SEMICONDUCTOR DEVICE

摘要

A thin film transistor and a semiconductor device are provided to enhance current and mobility by using a layer having a high crystal property as a channel forming region. A conductive film(101) is formed on a substrate. A gate insulation film(102) covers the conductive film. A semiconductor film(103) is formed on the gate insulation film. A part of the semiconductor film is overlapped with the conductive film. A pair of semiconductor films(104) is formed on the semiconductor film. A pair of semiconductor films includes impurity element, and functions as a source region or a drain region. The first semiconductor film includes a layer which is separated from a pair of second semiconductor films and the gate insulation film.