| 摘要 |
<p>A manufacturing method of a semiconductor device is provided to reduce a manufacturing time and cost of a semiconductor device by using an exposure technique using a gray tone photo mask or a half tone photo mask. A transparent conductive film and a first metal film are successively formed on a substrate. A common electrode(101) is arranged on an insulation substrate. A source interconnection(104) intersects with each gate interconnection(102) and a common interconnection(103). A pixel electrode(108) is arranged in a region which is surrounded by the gate interconnection, a common interconnection, and the source interconnection. An insulation film, a first semiconductor film, a second semiconductor film, and a second metal film are successively formed on the gate electrode. A protective film is formed on a thin film transistor. The pixel electrode is formed on the protective film.</p> |
