| 摘要 |
<p>A method for forming a pattern of a semiconductor device is provided to form the pattern with a uniform line shape by using the photomask forming a plurality of transparent patterns in a line type. A photoresist is formed in an upper part of a layer to be etched. The photoresist is selectively exposed by using an illumination system and a photomask(306). The illumination system has an opening. A plurality of floodlight patterns(306b) are arranged in the photomask in a row. The photolithography process is performed to the exposed photoresist and the photoresist is patterned in a line shape.</p> |
