| 摘要 |
An image sensor and a manufacturing method thereof are provided to lower a critical voltage of a peripheral pixel array by forming thickness of a gate oxide film of a pixel belonging to the peripheral pixel array thinner than thickness of a gate oxide film of a pixel belonging to a center pixel array. An isolation film(200) is formed on an isolation region. A gate pattern comprises a gate oxide film(202A) and a gate silicon(204) formed on a semiconductor substrate(190). A photo diode region(206) is formed on an active region of the semiconductor substrate. A spacer is formed in a side of the gate pattern. The spacer is formed into ONO(Oxide-Nitride-Oxide) or ON(Oxide-Nitride) structure. The spacer(208A,210A) is formed in a right side of the gate pattern. The spacer(208B,210B) is formed in a left side of the gate pattern.
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