MANUFACTURING METHOD OF A DEVICE OF THE SEMICONDUCTOR USING AMORPHOUS CARBON LAYER FOR HARDMASK

摘要

A manufacturing method of a device of a semiconductor using an amorphous carbon layer for a hard mask are provided to control property of the amorphous carbon easily by making the amorphous carbon layer of a neo-hexane compound. A manufacturing method of a device of a semiconductor using an amorphous carbon layer is comprised of the steps: a conductive layer or an oxide layer is formed on the semiconductor substrate(S110); a hard mask is formed on the conductive layer or the oxide layer (S120); a resist layer is deposited on a hard mask and it is patterned (S130); a hard mask is etched (S140); The conductive layer or the oxide layer is etched (S150); and remaining hard mask is removed(S160).