| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device including a test circuit for reducing test time. SOLUTION: The semiconductor memory device includes a test circuit for generating leakage current in the semiconductor memory device in a standby state in response to a test mode signal and a standby signal that provides standby state information of the semiconductor memory device. In another aspect, the semiconductor memory device includes a test circuit for generating leakage current having the amount of current equal to that of operation current during the operation of the semiconductor memory device when a test mode is activated and the semiconductor memory device is in a standby state. COPYRIGHT: (C)2009,JPO&INPIT
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