| 摘要 |
Fabrication methods for capacitive micromachined ultrasonic transducers (CMUTS) with independent and precise gap and post thickness control are provided. The fabrication methods are based on local oxidation or local oxidation of silicon (LOCOS) to grow oxide posts. The process steps enable low surface roughness to be maintained to allow for direct wafer bonding of the membrane. In addition, methods for fabricating a step in a substrate are provided with reduced or minimal over-etch time by utilizing the nonlinearity of oxide growth. The fabrication methods of the present invention produce CMUTs with unmatched uniformity, low parasitic capacitance, and high breakdown voltage.
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