| 摘要 |
A semiconductor device and a method of fabricating the same includes a groove formed in a semiconductor substrate, a gate electrode formed in the groove, source/drain regions disposed adjacent sidewalls of the gate electrode, and spacers interposed between the gate electrode and the source/drain regions such that the uppermost surface of the source/drain regions, the uppermost surface of the gate electrode and the uppermost surface of the spacers are formed on the same plane.
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