发明名称 |
Semiconductor device having resistance based memory array, method of reading and writing, and systems associated therewith |
摘要 |
At least one embodiment includes a non-volatile memory cell array, a write buffer configured to store data being written into the non-volatile memory cell array, and a write unit configured to write data into the non-volatile memory cell array. The write unit is configured to perform writing of data such that each data will have reached a stable storage state in the non-volatile memory prior to being over-written in the write buffer.
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申请公布号 |
US2009141549(A1) |
申请公布日期 |
2009.06.04 |
申请号 |
US20080292890 |
申请日期 |
2008.11.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE KWANG JIN;KIM DU EUNG;KIM HYE JIN |
分类号 |
G11C11/46;G11C7/10;G11C15/00 |
主分类号 |
G11C11/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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