发明名称 Semiconductor device having resistance based memory array, method of reading and writing, and systems associated therewith
摘要 At least one embodiment includes a non-volatile memory cell array, a write buffer configured to store data being written into the non-volatile memory cell array, and a write unit configured to write data into the non-volatile memory cell array. The write unit is configured to perform writing of data such that each data will have reached a stable storage state in the non-volatile memory prior to being over-written in the write buffer.
申请公布号 US2009141549(A1) 申请公布日期 2009.06.04
申请号 US20080292890 申请日期 2008.11.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE KWANG JIN;KIM DU EUNG;KIM HYE JIN
分类号 G11C11/46;G11C7/10;G11C15/00 主分类号 G11C11/46
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