发明名称 Locally gated graphene nanostructures and methods of making and using
摘要 A locally gated graphene nanostructure is described, along with methods of making and using the same. A graphene layer can include first and second terminal regions separated by a substantially single layer gated graphene nanoconstriction. A local first gate region can be separated from the graphene nanoconstriction by a first gate dielectric. The local first gate region can be capacitively coupled to gate electrical conduction in the graphene nanoconstriction. A second gate region can be separated from the graphene nanoconstriction by a second gate dielectric. The second gate region can be capacitively coupled to provide a bias to a first location in the graphene nanoconstriction and to a second location outside of the graphene nanoconstriction. Methods of making and using locally gated graphene nanostructures are also described.
申请公布号 US2009140801(A1) 申请公布日期 2009.06.04
申请号 US20080290648 申请日期 2008.10.31
申请人 THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK 发明人 OZYILMAZ BARBAROS;EFETOV DMITRI;JARILLO-HERRERO PABLO;HAN MELINDA Y.;KIM PHILIP
分类号 H03H11/46;H01L29/16 主分类号 H03H11/46
代理机构 代理人
主权项
地址