发明名称 |
Locally gated graphene nanostructures and methods of making and using |
摘要 |
A locally gated graphene nanostructure is described, along with methods of making and using the same. A graphene layer can include first and second terminal regions separated by a substantially single layer gated graphene nanoconstriction. A local first gate region can be separated from the graphene nanoconstriction by a first gate dielectric. The local first gate region can be capacitively coupled to gate electrical conduction in the graphene nanoconstriction. A second gate region can be separated from the graphene nanoconstriction by a second gate dielectric. The second gate region can be capacitively coupled to provide a bias to a first location in the graphene nanoconstriction and to a second location outside of the graphene nanoconstriction. Methods of making and using locally gated graphene nanostructures are also described.
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申请公布号 |
US2009140801(A1) |
申请公布日期 |
2009.06.04 |
申请号 |
US20080290648 |
申请日期 |
2008.10.31 |
申请人 |
THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK |
发明人 |
OZYILMAZ BARBAROS;EFETOV DMITRI;JARILLO-HERRERO PABLO;HAN MELINDA Y.;KIM PHILIP |
分类号 |
H03H11/46;H01L29/16 |
主分类号 |
H03H11/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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