MEMORY CELL

摘要

Provided is a memory cell which can apply a voltage required for changing a resistance value into a high state and a low state to a variable resistance element by suitably controlling the resistance value. In the memory cell, a storage element (10), a nonlinear resistance element (20) and an MOS transistor (30) are electrically connected in series. The storage element (10) has nonlinear current-voltage characteristics reverse to those of the MOS transistor (30), and changes into the high resistance state or the low resistance state corresponding to the polarity of the voltage applied. The nonlinear resistance element (20) has nonlinear current-voltage characteristics common to those of the storage element (10).