PHOTORESIST COMPOSITION WITH HIGH ETCHING RESISTANCE
摘要
<p>The present invention provides a first polymer including a repeating unit represented by a predetermined chemical formula, (b) a second polymer including a repeating unit represented by a predetermined chemical formula, (c) a photoacid generator (PAG), and (d) a solvent. The resist composition has excellent resistance for dry etching and excellent adhesion characteristics for an underlayer, and good lithography performance for an exposure light source having an ultrashort wavelength region.</p>
