LIGHT OUTPUT ENHANCED GALLIUM NITRIDE BASED THIN LIGHT EMITTING DIODE
摘要
<p>A gallium nitride (GaN) based light emitting device, wherein the device comprises a first surface and a second surface, and the first surface and second surface are separated by a thickness of less than 100 micrometers, and preferably less than 20 micrometers. The first surface may be roughened or textured. A silver or silver alloy may be deposited on the second surface. The second surface of the device may be bonded to a permanent substrate.</p>
申请公布号
WO2009070808(A1)
申请公布日期
2009.06.04
申请号
WO2008US85190
申请日期
2008.12.01
申请人
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;SONODA, JUNICHI;NAKAMURA, SHUJI;ISO, KENJI;DENBAARS, STEVEN, P.;SAITO, MAKOTO