发明名称 METHOD FOR PRODUCING SEMICONDUCTOR WAFER WITH POLISHED EDGE PART
摘要 <P>PROBLEM TO BE SOLVED: To provide a method capable of producing a semiconductor wafer having a polished edge part perfectly conforming to requirements relating to roughness and shape. <P>SOLUTION: This method for producing a semiconductor wafer having a polished edge includes the steps of polishing at least one side of the semiconductor wafer, and polishing the edge part of the polished semiconductor wafer, wherein the edge part is polished in the presence of a polishing agent by means of a polishing cloth containing fixed abrasive. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009124153(A) 申请公布日期 2009.06.04
申请号 JP20080291653 申请日期 2008.11.14
申请人 SILTRONIC AG 发明人 ROETTGER KLAUS;AIGNER WERNER;TABATA MAKOTO
分类号 H01L21/304;B24B9/00;B24B37/04 主分类号 H01L21/304
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