| 摘要 |
PROBLEM TO BE SOLVED: To provide a dummy wafer which has a high corrosion resistance against a cleaning gas and an etching gas which are highly corrosive, and can be used for a long period. SOLUTION: The wafer has a rare-earth oxide layer on the uppermost layer of a substrate. The wafer can prevent reduction in thickness of a semiconductor wafer and generation of particles in cleaning and stabilizing a plasma etching apparatus and a plasma deposition apparatus, and can improve its service life, if used as a dummy wafer, because it has a high film hardness. COPYRIGHT: (C)2009,JPO&INPIT
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