发明名称 Metal foil interconnection of electrical devices
摘要 An electrical assembly (300, 400) includes a power IC such as a MOSFET (112, 412) attached to a substrate module (114, 214). The MOSFET includes a top surface comprising first and second conductive device surfaces (A, B), associated with first and second device ports, and a bottom surface comprising a third conductive device surface C associated with a third device port. A first foil element is bonded to the first conductive device surface(s) A and to each of the first conductive substrate surfaces (A1, A2) and provides a continuous conductive pathway from each conductive surface (A) to each other conductive surface (A) and to each conductive surface (A1, A2). A second foil element is bonded to the second conductive device surface(s) B and to the second conductive substrate surface B1 and provides a continuous conductive pathway from each device conductive surface (B) to the substrate conductive surface (B1). A third foil element may be installed to electrically interconnect the discrete second device surfaces (B). The foil elements reduce interconnection parasitics and reduce charge and thermal energy density at device conductive surfaces as compared to wire bonded electrical interconnections. The foil elements may be comprised of formed metal elements that are flexible but sufficiently rigid to hold a formed shape or flexible foils supported on a flexible dielectric substrate.
申请公布号 US2009140427(A1) 申请公布日期 2009.06.04
申请号 US20070998670 申请日期 2007.11.30
申请人 RAYTHEON COMPANY 发明人 GUINN KEITH V.
分类号 H01L23/488;H01L21/58 主分类号 H01L23/488
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