发明名称 SENSOR FOR A MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 <p>The invention encompasses fabrication methods including the steps of preparing a silicon substrate, forming an amorphous IH-V material layer on the silicon substrate, heating the amorphous HI-V material layer, and epitaxially growing HI-V material on the amorphous III-V material layer.</p>
申请公布号 WO2009070201(A1) 申请公布日期 2009.06.04
申请号 WO2008US12582 申请日期 2008.11.07
申请人 IMAI, DARREN;KUPER, CYNTHIA;MICROMEM TECHNOLOGIES INC. 发明人 IMAI, DARREN;KUPER, CYNTHIA
分类号 G11C11/18 主分类号 G11C11/18
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