发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has favorable insulating characteristics, and a method of manufacturing the semiconductor device easily and inexpensively. <P>SOLUTION: The method of manufacturing a semiconductor device comprises a substrate positioning step of positioning a substrate having a semiconductor element mounted thereon in a molding die and an unfoam positioning step of locating an unfoam which starts its foaming at a predetermined temperature at a predetermined position on the substrate. The method further comprises a thermoplastic injecting step of injecting a thermoplastic resin having a temperature not lower than the predetermined temperature into the molding die after the substrate positioning step and the unfoam positioning step. The method further comprises a cooling step of cooling the thermoplastic resin after the thermoplastic resin injecting step. The foamed state of the foam is kept until the thermoplastic resin is solidified or significantly solidified in the cooling step. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009123822(A) 申请公布日期 2009.06.04
申请号 JP20070294430 申请日期 2007.11.13
申请人 MITSUBISHI ELECTRIC CORP 发明人 TANIGUCHI NOBUTAKE;YOSHIDA HIROSHI;SHIODA HIRONORI;HIRAMATSU SEIKI
分类号 H01L21/56;H01L23/29;H01L23/31 主分类号 H01L21/56
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