发明名称 |
Memory Cell Device With Circumferentially-Extending Memory Element |
摘要 |
A memory device comprises a contact and a pillar-shaped structure on the contact. The pillar-shaped structure includes a conductive inner element surrounded by a memory outer layer. A transition region is located at the memory outer layer above said contact. The conductive element may directly contact said contact.
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申请公布号 |
US2009140230(A1) |
申请公布日期 |
2009.06.04 |
申请号 |
US20090368190 |
申请日期 |
2009.02.09 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LUNG HSIANG LAN |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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