发明名称 MULTI-CHIP STACK STRUCTURE AND METHOD FOR FABRICATING THE SAME
摘要 A multi-chip stack structure and a method for fabricating the same are provided. The method for fabricating a multi-chip stack structure includes disposing a first chip group comprising a plurality of first chips on a chip carrier by using a step-like manner, disposing a second chip on the first chip on top of the first chip group, electrically connecting the first chip group and the second chip to the chip carrier through bonding wires, using film over wire (FOW) to stack a third chip on the first and the second chips with an insulative film provided therebetween, wherein the insulative film covers part of the ends of the bonding wires of the first chip on the top of the first group and at least part of the second chip, and electrically connecting the third chip to the chip carrier through bonding wires, thereby preventing directly disposing on a first chip a second chip having a planar size far smaller than that of the first chip as in the prior art that increases height of the entire structure and increases the wiring bonding difficulty.
申请公布号 US2009140440(A1) 申请公布日期 2009.06.04
申请号 US20080266830 申请日期 2008.11.07
申请人 SILICONWARE PRECISION INDUSTRIES CO., LTD. 发明人 LIU CHUNG-LUN;HUANG JUNG-PIN;CHANG YI-FENG;CHANG CHIN-HUANG
分类号 H01L23/52;H01L21/00 主分类号 H01L23/52
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