| 发明名称 |
Verfahren zur Herstellung von Si-Wafern mit einer Lanthanoid-Silikat-Schicht |
| 摘要 |
<p>The invention relates to a method for the wet-chemical production of a lanthanoid-silicate layer on a substrate having a surface containing silicon. Said method comprises the following steps; moistening the surface of the substrate with a solution of an lanthanoid salt, especially a lanthanoid nitrate, or a lanthanoid oxide and warming the moistened substrate to a predetermined temperature and maintaining the temperature for a predetermined period of time.</p> |
| 申请公布号 |
DE10309728(B4) |
申请公布日期 |
2009.06.04 |
| 申请号 |
DE2003109728 |
申请日期 |
2003.02.26 |
| 申请人 |
IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/INSTITUT FUER INNOVATIVE MIKROELEKTRONIK |
发明人 |
MUESSIG, HANS-JOACHIM;SCHMEISER, DIETER |
| 分类号 |
H01L21/316;C01F17/00;C23C2/26;C23C4/12;C23C18/00;C23C22/00;C23C26/00;H01L21/28;H01L21/314;H01L21/336;H01L29/51 |
主分类号 |
H01L21/316 |
| 代理机构 |
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