RF GROUNDING OF CATHODE IN PROCESS CHAMBER

摘要

An RF ground of a cathode inside a process chamber is provided to limit a voltage drop in an RF current return path. A device for providing an RF current return path is prepared between a process chamber wall and a substrate support surrounded with the process chamber wall. The device for providing the RF current return path includes the substrate support and an RF return assembly(280). The substrate support moves between a first position and a second position. The RF return assembly includes one member or more and a plurality of flexible straps. One member or more moves from a third position and a fourth position. The third position is separated from the substrate support when the substrate support is in a lower position. The plurality of flexible straps have first ends and second ends, and a bending part between the first ends and the second ends.