| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce GIDL which is caused by a high electric field in a semiconductor device without decreasing its driving capability. <P>SOLUTION: A gate electrode 108 includes a first conductive part 108A which is positioned in the center of the direction of channel length of the gate electrode 108 and contacts a high permittivity film 107, namely a gate insulating film and a second conductive parts 108B which are positioned at both ends of the direction of channel length of the gate electrode 108 and contacts the high permittivity film 107, namely the gate insulating film. A first work function of the first conductive part 108A and a second work function of the second conductive part 108B are different. <P>COPYRIGHT: (C)2009,JPO&INPIT |
