发明名称 GATE DRIVE FOR VOLTAGE-DRIVEN SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To solve the problem that there is a risk that voltage unbalance may occur at turn on, though switching timing is adjusted by a magnetic coupling means, in a serially connected circuit. <P>SOLUTION: The slippage of the gate signal timing of individual semiconductor switching elements connected in series is suppressed with magnetic coupling means, and a voltage unbalance caused by a difference in element property such as a tail current property, etc. is suppressed by adding a means for adjusting the charge time of input capacity, based on the element voltage at turn on. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009124781(A) 申请公布日期 2009.06.04
申请号 JP20070292989 申请日期 2007.11.12
申请人 FUJI ELECTRIC SYSTEMS CO LTD 发明人 MATSUBARA KUNIO
分类号 H02M1/08;H02M7/5387;H03K17/56 主分类号 H02M1/08
代理机构 代理人
主权项
地址