| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element which has improved light extraction efficiency without damaging a GaN-based semiconductor layer having a light extraction surface. <P>SOLUTION: On a sapphire substrate 1, a GaN buffer layer 2, an n-type GaN contact layer 3, an MWQ active layer 4, and a p-type GaN contact layer 5 are stacked in order, and a partial region is mesa-etched from the p-type GaN contact layer 5 halfway to the n-type GaN contact layer 3 to form an (n) electrode 7. Meanwhile, a (p) electrode 6 is provided on the p-type GaN contact layer 5, and a plurality of ridge portions 8 are formed in dots by crystal growth in addition to the (p) electrode 6. <P>COPYRIGHT: (C)2009,JPO&INPIT |
