MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a high yield, and having structure capable of sufficiently reducing capacitance between wires. SOLUTION: This manufacturing method of a semiconductor device includes processes of: forming an insulation film on a substrate; forming a plurality of wiring grooves in the insulation film; forming a plurality of wires in the plurality of wiring grooves; forming a resist mask having openings selectively exposing regions within regions among the plurality of wires on the insulation film and the plurality of wires; forming air gap grooves by removing the insulation film in the selectively exposed regions within the regions among the plurality of wires by etching using the resist mask; and forming air gaps by depositing an interlayer insulation film to cover the plurality of wires after removing the resist mask. COPYRIGHT: (C)2009,JPO&INPIT