SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a transistor structure capable of restraining deterioration in NBTI. SOLUTION: The semiconductor device includes: a silicon substrate having an n-type region; a gate insulating film which is formed of a silicon oxide containing nitrogen on the n-type region; a gate electrode which is formed of silicon containing boron on the gate insulating film; a p-type source/drain region formed in the silicon substrate on both sides of the gate electrode; a side wall spacer which is formed of a silicon oxide on the side wall of the gate electrode; an interlayer insulating film which has a flattened surface and covers the gate electrode and the side wall spacer; a recessed part for wiring formed from the flattened surface of the interlayer insulating film toward the inside; a copper wiring which buries the recessed part including a base barrier layer and a copper region thereon; and a silicon carbide layer which is formed on the interlayer insulating film and covers the copper wiring. COPYRIGHT: (C)2009,JPO&INPIT