发明名称 SEMICONDUCTOR ELEMENT, AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To solve a problem wherein reliability of an element is degraded which occurs in a process of forming via plugs electrically connecting metal wires. SOLUTION: This manufacturing method of a semiconductor element includes steps of forming: multiple metal wires on a semiconductor substrate; a reaction prevention film on the metal wires in a region with via holes formed therein; an interlayer insulation film on the semiconductor substrate including the reaction prevention film; via holes by etching the interlayer insulation film above the reaction prevention film; and the via plugs in the via holes. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009124103(A) 申请公布日期 2009.06.04
申请号 JP20080209031 申请日期 2008.08.14
申请人 HYNIX SEMICONDUCTOR INC 发明人 GIL MIN CHUL
分类号 H01L21/768;H01L21/3205;H01L21/8247;H01L23/52;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/768
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