发明名称 |
SEMICONDUCTOR ELEMENT, AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To solve a problem wherein reliability of an element is degraded which occurs in a process of forming via plugs electrically connecting metal wires. SOLUTION: This manufacturing method of a semiconductor element includes steps of forming: multiple metal wires on a semiconductor substrate; a reaction prevention film on the metal wires in a region with via holes formed therein; an interlayer insulation film on the semiconductor substrate including the reaction prevention film; via holes by etching the interlayer insulation film above the reaction prevention film; and the via plugs in the via holes. COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2009124103(A) |
申请公布日期 |
2009.06.04 |
申请号 |
JP20080209031 |
申请日期 |
2008.08.14 |
申请人 |
HYNIX SEMICONDUCTOR INC |
发明人 |
GIL MIN CHUL |
分类号 |
H01L21/768;H01L21/3205;H01L21/8247;H01L23/52;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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