| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a new semiconductor integrated circuit capable of relieving defective places of a nonvolatile memory and/or a volatile memory. <P>SOLUTION: This semiconductor integrated circuit is provided with: a relief objective nonvolatile memory; a test circuit for testing the nonvolatile memory; a relief information holding circuit capable of holding an address of the defective place of the nonvolatile memory and the normal data; a relief memory prepared in a memory circuit or a logic circuit while it is usable for relieving the defective place of the nonvolatile memory; and a relief circuit for writing the address of the defective place of the nonvolatile memory and the normal data into the relief memory from the relief information holding circuit and changing over the read-out from the defective part of the nonvolatile memory to the read-out from the relief memory. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
