| 摘要 |
PROBLEM TO BE SOLVED: To favorably form a protection film to a side surface of a thin semiconductor chip by a grinding process. SOLUTION: A plurality of channels (4) are formed in the shape of a lattice to one principal plane (1a) of a semiconductor wafer (1), a thermally-vaporizing substance (5) vaporized by heat treatment is supplied to a part of the channel (4), and thereafter a protection resin (6) is supplied to fill the channel (4) on the thermally vaporizing substance (5). Next, after the thermally vaporizing substance (5) is vaporized by heating the semiconductor wafer (1) to form a cavity (7) in the lower channel (4) of the protection resin (6), the other principal plane (1b) of the semiconductor wafer (1) is ground by a grinder (10) until the grinding surface reaches the cavity (7). Thereafter, the protection resin (6) is cut along the center of the protection resin (6) to divide the wafer into a plurality of semiconductor chips (3) covered with the protection resin (6) at the side surface (3c). COPYRIGHT: (C)2009,JPO&INPIT
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