发明名称 HEAT TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a heat treatment apparatus which can improve in-plane uniformity of temperature distribution on a substrate during heat treatment. SOLUTION: A light is directed from a first light irradiation part 3 to a substrate W held onto a holding part 2, so as to apply primary heat treatment, and a flash light is given from a second light irradiation part 4 thereto for flash heating. A part of light emitted from the light irradiation parts 3 and 4 is reflected on a reflection plate 11a, and it arrives at a semiconductor wafer W. An attitude change mechanism 111a is connected to each reflection plate 11a, so as to change the posture of the respective reflection plate 11a. Changing of the posture of the reflection plate 11a can reduce (or increase) a flux of light entering a specific area of the semiconductor wafer W. Thus, an area wherein ununiformity in temperature occurs in the substrate W can be eliminated. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009123810(A) 申请公布日期 2009.06.04
申请号 JP20070294216 申请日期 2007.11.13
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 KUSUDA TATSUFUMI
分类号 H01L21/26;H01L21/265 主分类号 H01L21/26
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