| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for producing an SiC single crystal, capable of suppressing the occurrence of crystal defects. SOLUTION: The apparatus for producing the SiC single crystal by a sublimation recrystallization method has a structure equipped with a container 1 equipped with a main body 1a with a hollow shape with an opening of one side, a bonnet material 1b arranged on one side of the opening of the main body 1a, and a pedestal 5 with an SiC single crystal basal plate 3 arranged thereon. In the apparatus, the bonnet material 1b and the pedestal 5 are composed of different members; the pedestal 5 is composed of a multilayer structure having at least three layers; the average of thermal expansion coefficientβof the first to the third graphite members 5a to 5c is conformed to the thermal expansion coefficientβof the SiC single crystal basal plate 3; thus, even when the structure is such that the SiC single crystal basal plate 3 is attached to the pedestal 5, the generation of thermal stress in the SiC single crystal basal plate 3 and an SiC single crystal 4 and caused by the difference of the thermal expansion coefficients of SiC and graphite can be controlled, thus controlling the generation of crystal defects in the SiC single crystal 4. COPYRIGHT: (C)2009,JPO&INPIT
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