| 发明名称 |
MEMORY AND METHOD FOR DISSIPATION CAUSED BY CURRENT LEAKAGE |
| 摘要 |
Memories with low power consumption and methods for suppressing current leakage of a memory. The memory cell of the memory has a storage element and a transistor coupled in series. The invention sets a voltage across the transistor approaching to zero when the memory is not been accessed.
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| 申请公布号 |
US2009141548(A1) |
申请公布日期 |
2009.06.04 |
| 申请号 |
US20080273414 |
申请日期 |
2008.11.18 |
| 申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE;POWERCHIP SEMICONDUCTOR CORP.;NANYA TECHNOLOGY CORPORATION;PROMOS TECHNOLOGIES INC.;WINBOND ELECTRONICS CORP. |
发明人 |
LIN WEN-PIN;SHEU SHYH-SHYUAN;LIN LIEH-CHIU;CHIANG PEI-CHIA |
| 分类号 |
G11C5/14;G11C11/00 |
主分类号 |
G11C5/14 |
| 代理机构 |
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