| 摘要 |
A semiconductor device includes a substrate having bumps on the backside thereof, a first semiconductor chip mounted on the surface of the substrate, a second semiconductor chip mounted on the first semiconductor chip above the surface of the substrate, a first bonding wire having a length L1 for connecting the first semiconductor chip to the substrate, a second bonding wire having a length L2 (where L2>L1) for connecting the second semiconductor chip to the substrate, a first resin seal having a dielectric constant epsilon1 for sealing the first bonding wire, and a second resin seal having a dielectric constant epsilon2 (where epsilon2<epsilon1) for sealing the second bonding wire. The relationship between the lengths L1 and L2 and the dielectric constants epsilon1 and epsilon2 is defined by an equation of epsilon1=epsilon2(L2/L1)2.
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