| 摘要 |
The invention relates to a method for a complex oxide film having a high relative dielectric constant and a thickness which can be arbitrarily controlled, which is obtained, without using any large-scale equipment, by forming a metal oxide layer containing a first metal element on substrate surface and then allowing the layer to react with a solution containing a second metal ion to thereby form a complex oxide film containing the first and second metal elements, and a production method thereof. Further, the invention relates to a dielectric material and a piezoelectric material containing the complex oxide film, a capacitor and a piezoelectric element including the material, and an electronic device comprising the element.
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