| 摘要 |
<P>PROBLEM TO BE SOLVED: To easily and freely control plasma density distribution in a capacitive coupling type plasma treatment apparatus, so as to improve uniformity and yield of a plasma process. <P>SOLUTION: The main face of a susceptor 12, i.e., the upper face thereof is covered with an insulating plate 36, and a cavity plasma forming section 42 having an airtight cavity 40 that is partitioned by an insulating wall 38 is provided under (backside) the insulating plate 36. The cavity 40 is filled with an inert gas and sealed, and when high-frequency waves from a high-frequency power supply 45 are applied to a helical antenna 44, the inert gas is electrically discharged within the cavity 40, thereby generating plasma. The plasma within the cavity 40 is allowed to act as a dielectric, so as to easily and freely control the distribution characteristic of plasma density in a processing space PS. <P>COPYRIGHT: (C)2009,JPO&INPIT |
