发明名称 FERROELECTRIC MICROSTRUCTURE AND ITS MANUFACTURING METHOD, AND RECORDING AND REPRODUCING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide: a microstructure made of a ferroelectric material, which can be expected to be applied to ultra-high density recording of data or the like; and its manufacturing method; and a method of recording and reproducing information to and from the microstructure. <P>SOLUTION: A micropore structure 2 having minute pores 3 is formed on a lower electrode 1, and the minute pores 3 are filled with a ferroelectric material, thereby forming minute dots made of the ferroelectric material. The dots have a nano-structure, where each dot has a diameter of≤100 nm and the dots are two-dimensionally and periodically arranged at intervals of≤100 nm. Each nano-dot exhibits P-E hysteresis characteristics caused by accumulation of charge which is specific to ferroelectrics, and therefore, can be used as a memory. The micropore structure 2 is formed by etching-removing dot portions of microphase separation structures in which portions of polymer chains of block copolymers are aggregated in dot patterns. The memory is written and read by applying a voltage and detecting a potential or the like, where a cantilever probe is used as an upper electrode. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009123336(A) 申请公布日期 2009.06.04
申请号 JP20090040141 申请日期 2009.02.24
申请人 SONY CORP 发明人 ISOBE CHIHARU;HIRONAKA KATSUYUKI;NAITO HIROKI;SUZUKI MASAYUKI
分类号 G11B9/02;B82B1/00;B82B3/00 主分类号 G11B9/02
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