| 摘要 |
PROBLEM TO BE SOLVED: To mitigate the stress of the bonding part of a semiconductor laser and a sub-mount generated in die bonding. SOLUTION: An Au electrode 26 having a square shape is formed at the outer-peripheral lower part of AuSn 27, which is a bonding electrode with the semiconductor laser in the sub-mount 21; and while the ratio of Au<SB>5</SB>Sn at the outer peripheral part of the bonding part of the semiconductor laser and the sub-mount 21 is increased, the ratio of AuSn at the center part is increased. In this case, Au<SB>5</SB>Sn is lower in hardness and softer than AuSn. Thus, the stress generated intensively at the peripheral part of the bonding part due to the difference in the cooling speed between the outer peripheral part and the center part in the bonding part of the semiconductor laser, and the sub-mount 21 can be relaxed, and distortions acting on the semiconductor laser are reduced. COPYRIGHT: (C)2009,JPO&INPIT
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